英飞凌IGBT芯片有哪些型号规格参数?

2025-03-13 18:33:44
推荐回答(2个)
回答1:

600V英飞凌IGBT芯片晶圆

IGC03R60DE       600V      2.5 A

SIGC03T60E      600V      4.0A

SIGC03T60SE       600V      4.0 A

SIGC03T60SNC    600V      2.0 A

IGC04R60DE       600V      4.0 A

SIGC04T60E        600V      6.0 A

SIGC04T60GE      600V      6.0 A

SIGC04T60GSE    600V      6.0 A

IGC05R60DE       600V      6.0 A

SIGC05T60SNC    600V      4.0 A

IGC06R60DE       600V      8.0 A

SIGC06T60E        600V      10.0 A

SIGC06T60GE      600V      10.0 A

IGC07R60DE       600V      10.0 A

SIGC07T60NC      600V      6.0 A

SIGC07T60SNC    600V      6.0 A

SIGC07T60UN      600V      6.0 A

SIGC08T60E        600V      15.0 A

SIGC08T60SE       600V      15.0 A

IGC10R60DE       600V      15.0 A

SIGC10T60E        600V      20.0 A

SIGC10T60SE       600V      20.0 A

SIGC11T60NC       600V      10.0 A

SIGC11T60SNC     600V      10.0 A

SIGC12T60NC      600V      10.0 A

SIGC12T60SNC    600V      10.0 A

SIGC14T60NC      600V      15.0 A

SIGC14T60SNC    600V      15.0 A

SIGC15T60E        600V      30.0 A

SIGC15T60SE       600V      30.0 A

SIGC15T60UN      600V      15.0 A

SIGC18T60NC      600V      20.0 A

SIGC18T60SNC    600V    20.0 A

SIGC18T60UN      600V      20.0 A

SIGC19T60SE       600V      40.0 A

SIGC25T60NC      600V      30.0 A

SIGC25T60SNC    600V      30.0 A

SIGC25T60UN      600V      30.0 A

SIGC28T60E        600V      50.0 A

SIGC39T60E        600V      75.0 A

SIGC40T60R3E     600V      75.0 A

SIGC42T60NC      600V      50.0 A

SIGC42T60SNC    600V      50.0 A

SIGC42T60UN          600V      50.0 A

SIGC54T60R3E         600V      100.0 A

SIGC61T60NC          600V      75.0 A

SIGC76T60R3E          600V      150.0 A

SIGC81T60NC          600V      100.0A

SIGC81T60SNC         600V      100.0 A

SIGC100T60R3E        600V      200.0 A

SIGC121T60NR2C       600V      150.0 A

SIGC156T60NR2C       600V      200.0 A

SIGC156T60SNR2C      600V      200.0 A

650V英飞凌IGBT芯片晶圆

SIGC04T65E            650V      6.0 A

SIGC06T65E            650V      10.0 A

SIGC06T65GE          650V      10.0 A

SIGC08T65E            650V      15.0 A

SIGC10T65E            650V      20.0 A

IGC10T65QE            650V      20.0 A

SIGC15T65E            650V      30.0 A

IGC15T65QE            650V      30.0 A

IGC19T65QE            650V      40.0 A

SIGC28T65E            650V      50.0 A

IGC28T65T8M          650V      50.0 A

IGC28T65QE            650V      50.0 A

IGC31T65QE            650V      60.0 A

SIGC39T65E            650V      75.0 A

IGC39T65QE            650V      75.0 A

IGC39T65T8M          650V      75.0 A

SIGC40T65R3E         650V      75.0 A

SIGC54T65R3E          650V      100.0 A

IGC54T65R3QE         650V      100.0 A

IGC54T65T8RM         650V      100.0 A

SIGC76T65R3E         650V      150.0 A

IGC76T65T8RM  650V      150.0 A

SIGC78T65R3E          650V      150.0 A

SIGC100T65R3E         650V      200.0 A

IGC100T65T8RM 650V      200.0 A

1200V英飞凌IGBT芯片晶圆

IGC99T120T8RQ        1200V     100.0 A

IGC07T120T8L   1200V     4.0 A

IGC11T120T8L          1200V     8.0 A

SIGC12T120E           1200V     8.0 A

SIGC12T120LE          1200V     8.0 A

IGC13T120T8L   1200V     10.0 A

IGC18T120T8L   1200V     15.0 A

IGC18T120T8Q          1200V     15.0 A

SIGC20T120E           1200V     15.0 A

SIGC20T120LE          1200V     15.0 A

IGC27T120T8L   1200V     25.0 A

IGC27T120T8Q          1200V     25.0 A

SIGC32T120R3E         1200V     25.0 A

SIGC32T120R3LE       1200V     25.0 A

IGC36T120T8L   1200V     35.0 A

SIGC41T120R3E         1200V     35.0 A

SIGC41T120R3LE       1200V     40.0 A

IGC41T120T8Q          1200V     40.0 A

IGC50T120T8RL         1200V     50.0 A

IGC50T120T8RQ        1200V     50.0 A

SIGC57T120R3E       1200V     50.0 A

SIGC57T120R3LE       1200V     50.0 A

IGC70T120T8RL         1200V     75.0 A

IGC70T120T8RM        1200V     75.0 A

IGC70T120T8RQ        1200V     75.0 A

SIGC84T120R3E         1200V     75.0 A

SIGC84T120R3LE       1200V     75.0 A

IGC99T120T8RH        1200V     100.0 A

IGC99T120T8RL       1200V     100.0 A

IGC99T120T8RM 1200V     100.0 A

SIGC109T120R3E        1200V     100.0 A

SIGC109T120R3LE      1200V     100.0 A

IGC142T120T8RH       1200V     150.0 A

IGC142T120T8RL        1200V     150.0 A

IGC142T120T8RM1200V     150.0 A

SIGC158T120R3E        1200V     150.0 A

SIGC158T120R3LE      1200V     150.0 A

IGC189T120T8RL        1200V     200.0 A

IGC193T120T8RM1200V     200.0 A

SIGC06T120CS          1200V     2.0 A

SIGC16T120C           1200V     8.0 A

SIGC16T120CL         1200V     8.0 A

SIGC16T120CS          1200V     8.0 A

SIGC25T120C           1200V     15.0 A

SIGC25T120CL         1200V     15.0 A

SIGC25T120CS          1200V     15.0 A

SIGC25T120CS2        1200V     15.0 A

SIGC42T120C           1200V     25.0 A

SIGC42T120CL          1200V     25.0 A

SIGC42T120CQ         1200V     25.0 A

SIGC42T120CS          1200V     25.0 A

SIGC42T120CS2         1200V     25.0 A

SIGC81T120R2C         1200V     50.0 A

SIGC81T120R2C L       1200V     50.0 A

SIGC81T120R2CS       1200V     50.0 A

SIGC121T120R2C       1200V     75.0 A

SIGC121T120R2CL      1200V     75.0 A

SIGC121T120R2CS      1200V     75.0 A

SIGC156T120R2C       1200V     100.0 A

SIGC156T120R2CL      1200V     100.0 A

SIGC156T120R2CS      1200V     100.0 A

SIGC223T120R2CL      1200V     150.0 A

SIGC223T120R2CS      1200V     150.0 A

1700V英飞凌IGBT芯片晶圆

SIGC42T170R3GE       1700V     29A

SIGC68T170R3E         1700V     50A

IGC89T170S8RM        1700V     75A

SIGC101T170R3E       1700V     75A

IGC114T170S8RH       1700V     100A

IGC114T170S8RM      1700V     100A

SIGC128T170R3E        1700V     100A

IGC136T170S8RH2      1700V     117.5A

SIGC158T170R3E       1700V     125A

IGC168T170S8RH       1700V     150A

IGC168T170S8RM      1700V     150A

SIGC186T170R3E       1700V     150A

回答2:

英飞凌IGBT命名规则
一 Simens/EUPEC IGBT 命名系统:

Simens/EUPEC IGBT 各型号中所指电流都是在Tc=80°C时的标称,有些公司的IGBT是Tc=25°C的标称,敬请广大用户注意!
BSM100GB120DN2K
BSM--------------带反并联续流二极管(F.W.D)的IGBT模块
BYM--------------二极管模块
100-----------Tc=80°C时的额定电流
GA-------- 一单元模块
GB----------两单元模块(半桥模块)
GD----------六单元模块
GT----------三单元模块
GP----------七单元模块(功率集成模块)
GAL----------斩波模块(斩波二极管靠近集电极)
GAR----------斩波模块(斩波二极管靠近发射极)
120-------额定电压×10
DL------低饱和压降
DN2----高频型
DLC----带(EmCon)二极管的低饱和压降
BSM系列是原西门子IGBT模块的命名系统。西门子IGBT模块归入EUPEC后,EUPEC标准系列IGBT模块仍沿用西门子型号编制系统。但EUPEC原侧重生产大功率或高压IGBT模块,即EUPEC IHM&IHV系列IGBT模块有其自身的命名系统,EUPEC以FF、FZ、FS、FP来命名。凡是EUPEC成为Infineon(英飞凌)100%子公司后,所有IGBT模块均按EUPEC IGBT命名系统来命名.
FF400R12KE3
FZ------------ 一单元模块
FF--------------两单元模块(半桥模块)
FP--------------七单元模块(功率集成模块)
FD/DF------------斩波模块
F4---------------四单元模块
FS---------------六单元模块
DD---------------二极管模块
400-------------Tc=80°C时的额定电流
R------------逆导型
S-------------快速二极管
12-----------额定电压×100
KF---------高频型(主要在大模块上使用)
KL--------低饱和压降(主要在大模块上使用)
KS--------短拖尾高频型
KE--------低饱和压降
KT--------低饱和压降高频型

二 Simens/EUPEC SCR 命名系统:

T 930 N 18 T M C
T----------------------晶闸管
D----------------------二极管
930-----------------平均电流
0-----------------标准陶瓷圆盘封装
1-----------------大功率圆盘
4-----------------厚19mm
6-----------------厚35mm
7-----------------厚08mm
8-----------------厚14mm
9-----------------厚26mm
3-----------------光触发型
N-----------------相控器件
F---------------居中门极型快速晶闸管
S---------------门极分布式快速晶闸管 二极管
18 ----------耐压×100
B--------引线型
C-----------------焊针型
E-----------------平板式
T-----------------圆盘式
M -------------关断时间(A、B、C、D等表示关断时间)
C ----关断电压斜率(B、C、F等)
TT 430 N 22 K O F
TT ----------------------双晶闸管结构
DD----------------------双二极管结构
TD/DT------------------- 一个二极管&一个晶闸管
430-------------------平均电流
N------------------相控器件
F-------------------居中门极型快速晶闸管
S-------------------阴极交错式快速晶闸管
22--------------耐压×100
K-----------模块
O---------关断时间
F -----断电压斜率

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